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The valley degree of freedom in two-dimensional (2D) materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration, valley-polarized current has been realized. However, the demanding fabrication and operation requirements limit device reproducibility and scalability toward more advanced valleytronics circuits. We demonstrate a device architecture of a point junction where a valley-chiral 0D PN junction is easily configured, switchable, and capable of carrying valley current with an estimated polarization of ~80%. This work provides a building block in manipulating valley quantum numbers and scalable valleytronics.more » « less
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Ren, Wei; Davydov, Konstantin; Zhu, Ziyan; Ma, Jaden; Watanabe, Kenji; Taniguchi, Takashi; Kaxiras, Efthimios; Luskin, Mitchell; Wang, Ke (, Physical Review B)
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